Kn2222A транзистор характеристики: KN2222A транзистор характеристики, аналоги, datasheet, параметры, цоколевка, маркировка

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2N3904 характеристики. 2N3904 datasheet. NPN

2N3904 NPN застосування:

  • ДОБРЕ ПІДХОДИТЬ ДЛЯ ТБ І ПОБУТОВОЇ ТЕХНІКИ
  • ВИСОКЕ ПОСИЛЕННЯ І НИЗЬКА НАПРУГА НАСИЧЕННЯ

2N3904 datasheet pdf

Заміна та аналог транзистора 2N3904

2N4401, 2SC1008, 2SC1210, 2SC1211, 2SC815, BC537, BC538, KN2222A, KN3904, KSC1008, KSC815, KSP05, KSP06, KSP2222A, KSP8098, KSP8099, KTN2222A, MPS2222A, MPS2222AG, MPS650, MPS650G, MPS651, MPS651G, MPS8098, MPS8098G, MPS8099, MPS8099G, MPSA05, MPSA05G, MPSA06, MPSA06G, MPSW01A, MPSW01AG, MPSW05, MPSW05G, MPSW06, MPSW06G, NTE123AP, P2N2222A, P2N2222AG, PN100, PN2219A, PN2222A, PN3569, PN4033 or ZTX450.

Комплементарна пара

Комплементарна пара: 2N3906.

2N3904 характеристики

ПараметрСимволЗначенняОдиниця
Напруга колектор – емітерVCEO40Vdc
Напруга колектор − базаVCBO60Vdc
Напруга емітер − базаVEBO6. 0Vdc
Максимально допустимий постійний струм колектораIC200mAdc
Загальне розсіювання пристрою за TA = 25°C
Зниження вище 25°C		PD625
5.0		mW
mW/°C
Загальне розсіювання пристрою за TC = 25°C
Зниження вище 25°C		PD1.5
12		W
mW/°C
Макс. Робоча температура, температура зберіганняTJ , Tstg−55 to +150°C

ТЕПЛОВІ ХАРАКТЕРИСТИКИ2N3904

ХарактеристикаСимволMaxОдиниця
Термічний опір, з’єднання з навколишнім середовищемRJA200°C/W
Термічний опір, з’єднання з корпусомRJC83. 3°C/W

ЕЛЕКТРИЧНІ ХАРАКТЕРИСТИКИ 2N3906

(TA = 25°C, якщо не зазначено інше)

ХарактеристикаСимволMinMaxОдиниця
ВИМК. ХАРАКТЕРИСТИКИ
Напруга пробою колектор–емітер (IC = 1.0 mAdc, IB = 0)V(BR)CEO40–Vdc
Напруга пробою колектор-база (IC = 10 μAdc, IE = 0)V(BR)CBO60–Vdc
Напруга пробою база-емітер (IE = 10 μAdc, IC = 0)V(BR)EBO5. 0–
Базовий граничний струм (VCE = 30 Vdc, VEB = 3.0 Vdc)IBL–50nAdc
Струм відсічення колектора (VCE = 30 Vdc, VEB = 3.0 Vdc)ICEX–50nAdc
ВВІМК. ХАРАКТЕРИСТИКИ
Коефіцієнт постійного струму
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1. 0 Vdc)		hFE
40
70
100
60
30
−
−
300
−
−		−
Напруга насичення колектор–емітер
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc		VCE(sat)−
−		0.25
0.4		Vdc
Напруга насичення бази-емітера
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)		VBE(sat)0.65
−		0.85
0.95		Vdc

ХАРАКТЕРИСТИКИ СЛАБОГО СИГНАЛУ
ХарактеристикаСимволMinMaxОдиниця
Коефіцієнт підсилення струму − добуток пропускної здатності (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)fT300−MHz
Вихідна ємність (VCB = 5. 0 Vdc, IE = 0, f = 1.0 MHz)C obo−4.0pF
Вхідна ємність (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)C ibo−8pF
Вхідний опір (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)hie1.010kΩ
Коефіцієнт зворотного зв’язку за напругою (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)hre0.58.0X10− 4
Підсилення струму слабкого сигналу (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHzhfe100400−
Вихідний допуск (IC = 1. 0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)hoe1.040μmhos
Коефіцієнт шуму (IC = 100μ Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz)NF−5.0dB

ХАРАКТЕРИСТИКИ ПЕРЕМИКАННЯ

ХарактеристикаСимволMinMaxОдиниця
Час затримки(VCC = 3.0 Vdc, VBE = 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)		td−35ns
Час наростання(VCC = 3.0 Vdc, VBE = 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)		tr−35ns
Час зберігання(VCC = 3. 0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)ts−200ns
Час спаду(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)tf−50ns

Розміри та тип корпусу

Наш twitter

2n2222a datasheet, equivalent, cross reference search. transistor catalog

Биполярный транзистор 2N2219 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2N2219

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.8
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0. 8
A

Предельная температура PN-перехода (Tj): 175
°C

Граничная частота коэффициента передачи тока (ft): 250
MHz

Ёмкость коллекторного перехода (Cc): 8
pf

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: TO39

2N2219


Datasheet (PDF)

Кт807б

1.1. 2n2219 2n2219a 3.pdf Size:55K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N2219; 2N2219A
NPN switching transistors

1997 Sep 03
Product specification
Supersedes data of 1997 May 07
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN switching transistors 2N2219; 2N2219A
FEATURES PINNING
High current (max. 800 mA)
PIN DESCRIPTION
Low voltage (max. 40 V).
1

1.2. 2n2222a 2n2219a.pdf Size:168K _st

2N2219A
2N2222A

HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
cur

 1.3. 2n2218-2n2219-2n2221-2n2222.pdf Size:71K _st

2N2218-2N2219
2N2221-2N2222
HIGH-SPEED SWITCHES
DESCRIPTION
The 2N2218, 2N2219, 2N2221 and 2N2222 are sili-
con planar epitaxial NPN transistors in Jedec
TO-39 (for 2N2218 and 2N2219) and in Jedec
TO-18 (for 2N2221 and 2N2222) metal cases. They
are designed for high-speed switching applications
at collector currents up to 500 mA, and feature use-
ful current gain over a wide range of col

1.4. 2n2219a 2n2222a.pdf Size:166K _st

2N2219A
2N2222A

HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
cur

 1.

5. 2n2218-a 2n2219-a.pdf Size:56K _central

145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 Fax: (631) 435-1824

1.6. 2n2219a(to-39).pdf Size:327K _mcc

MCC
TM
Micro Commercial Components
Micro Commercial Components 20736 Marilla Street Chatsworth 2N2219A
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
SWITCHING
Features
Features
TRANSISTOR
Collector — Base Voltage 75 V
Collector — Current 800 mA
Medium Current, Bipolar Transistor
SMALL SIGNAL
Marking: Type number
BIPOLAR
Lead Free Finish/RoHS Compliant(Note 1) («P

1.7. 2n2218 2n2219.pdf Size:58K _microsemi

TECHNICAL DATA
NPN SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
Devices Qualified Level
JAN
2N2218 2N2219
JANTX
2N2218A 2N2219A
JANTXV
2N2218AL 2N2219AL
JANS
MAXIMUM RATINGS
2N2218 2N2218A; L
Ratings Symbol Unit
2N2219 2N2219A; L

Collector-Emitter Voltage 30 50 Vdc
VCEO
Collector-Base Voltage 60 75 Vdc
VCBO
TO- 39* (TO-205AD)
Emitter-Base

Другие транзисторы… 2N2217
, 2N2217-51
, 2N2217A
, 2N2218
, 2N2218A
, 2N2218AQF
, 2N2218AS
, 2N2218S
, BC639
, 2N2219A
, 2N2219AL
, 2N2219AQF
, 2N2219AS
, 2N2219S
, 2N222
, 2N2220
, 2N2220A
.

2N2222AUB Datasheet (PDF)

1.1. 2n2222aubc.pdf Size:138K _upd

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
DEVICES LEVELS
JANSM – 3K Rads (Si)
2N2221A 2N2222A
JANSD – 10K Rads (Si)
2N2221AL 2N2222AL
JANSP – 30K Rads (Si)
2N2221AUA 2N2222AUA

1.2. 2n2222aub.pdf Size:250K _optek

Product Bulletin JANTX, JANTXV, 2N2222AUB
September 1996
Surface Mount NPN General Purpose Transistor
Type JANTX, JANTXV, 2N2222AUB
Feature Absolute Maximum Ratings (TA = 25o C unless otherwise noted)
Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V
Ceramic surface mount package
Collector-Emitter Voltage. . . . . . . . .

 1.3. 2n2221a 2n2221al 2n2221aua 2n2221aub 2n2222a 2n2222al 2n2222aua 2n2222aub. pdf Size:377K _aeroflex

Radiation Hardened
NPN Silicon Switching Transistors
2N2221A, 2N2221AL, 2N2221AUA, 2N2221AUB
2N2222A, 2N2222AL, 2N2222AUA, 2N2222AUB
Features
• Qualified to MIL-PRF-19500/255
• Levels: Commerical
JANS
JANSM-3K Rads (Si)
JANSD-l0K Rads (Si)
JANSP-30K Rads (Si)

JANSL-50K Rads (Si)
JANSR-l00K Rads (Si)
• TO-18 (TO-206AA), Surface mount UA & UB Packages
Absolute Maximum Ra

KN2222A Datasheet (PDF)

Даташит bc556 pdf ( datasheet )

1.1. kn2222as s.pdf Size:43K _kec

SEMICONDUCTOR KN2222S/AS
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
Low Leakage Current
_
+
2.93 0.20
A
B 1.30+0.20/-0.15
: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.
C 1.30 MAX
2
Low Saturation Voltage 3 D 0.45+0.15/-0.05
E 2.40+0.30/-0.20
: VCE(sat)=0. 3V(Max.) ; IC=150mA, IB=15mA.
1
G 1

4.1. kn2222 a.pdf Size:39K _kec

SEMICONDUCTOR KN2222/A
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Low Leakage Current
: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.
N DIM MILLIMETERS
Low Saturation Voltage
A 4.70 MAX
E
K
: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. B 4.80 MAX
G
C 3.70 MAX
D
Complementary to the KN2907/2907A.
D 0.45
E 1.00
F

2N2219 Datasheet (PDF)

S8550t datasheet, equivalent, cross reference search

1.1. 2n2219 2n2219a 3.pdf Size:55K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N2219; 2N2219A
NPN switching transistors
1997 Sep 03
Product specification
Supersedes data of 1997 May 07
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN switching transistors 2N2219; 2N2219A
FEATURES PINNING
High current (max. 800 mA)
PIN DESCRIPTION
Low voltage (max. 40 V).
1

1.2. 2n2222a 2n2219a.pdf Size:168K _st

2N2219A
2N2222A

HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar

Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
cur

 1.3. 2n2218-2n2219-2n2221-2n2222.pdf Size:71K _st

2N2218-2N2219
2N2221-2N2222
HIGH-SPEED SWITCHES
DESCRIPTION
The 2N2218, 2N2219, 2N2221 and 2N2222 are sili-
con planar epitaxial NPN transistors in Jedec
TO-39 (for 2N2218 and 2N2219) and in Jedec
TO-18 (for 2N2221 and 2N2222) metal cases. They
are designed for high-speed switching applications
at collector currents up to 500 mA, and feature use-
ful current gain over a wide range of col

1. 4. 2n2219a 2n2222a.pdf Size:166K _st

2N2219A
2N2222A

HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
cur

 1.5. 2n2218-a 2n2219-a.pdf Size:56K _central

145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 Fax: (631) 435-1824

1.6. 2n2219a(to-39).pdf Size:327K _mcc

MCC
TM
Micro Commercial Components
Micro Commercial Components 20736 Marilla Street Chatsworth 2N2219A
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
SWITCHING
Features
Features
TRANSISTOR
Collector — Base Voltage 75 V
Collector — Current 800 mA
Medium Current, Bipolar Transistor

SMALL SIGNAL
Marking: Type number
BIPOLAR
Lead Free Finish/RoHS Compliant(Note 1) («P

1. 7. 2n2218 2n2219.pdf Size:58K _microsemi

TECHNICAL DATA
NPN SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
Devices Qualified Level
JAN
2N2218 2N2219
JANTX
2N2218A 2N2219A
JANTXV
2N2218AL 2N2219AL
JANS
MAXIMUM RATINGS
2N2218 2N2218A; L
Ratings Symbol Unit
2N2219 2N2219A; L
Collector-Emitter Voltage 30 50 Vdc
VCEO
Collector-Base Voltage 60 75 Vdc
VCBO
TO- 39* (TO-205AD)
Emitter-Base

PN2222A Datasheet (PDF)

1.1. pn2222arlrpg.pdf Size:194K _upd

PN2222, PN2222A
General Purpose
Transistors
NPN Silicon
http://onsemi.com
Features
• Pb-Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
2
Rating Symbol Value Unit

BASE
Collector-Emitter Voltage VCEO Vdc
1
PN2222 30
EMITTER
PN2222A 40
Collector-Base Voltage VCBO Vdc
PN2222 60
PN2222A 75
Emitter-Base Voltage VEBO Vdc
PN2222 5.0
TO-92
PN2222A 6. 0
CASE 29
STYLE

1.2. pn2222arlrag.pdf Size:194K _upd

PN2222, PN2222A
General Purpose
Transistors
NPN Silicon
http://onsemi.com
Features
• Pb-Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
2
Rating Symbol Value Unit
BASE
Collector-Emitter Voltage VCEO Vdc
1
PN2222 30
EMITTER
PN2222A 40
Collector-Base Voltage VCBO Vdc
PN2222 60
PN2222A 75
Emitter-Base Voltage VEBO Vdc
PN2222 5.0
TO-92
PN2222A 6.0
CASE 29
STYLE

 1.3. pn2222arlrmg.pdf Size:194K _upd

PN2222, PN2222A
General Purpose
Transistors

NPN Silicon
http://onsemi.com
Features
• Pb-Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
2
Rating Symbol Value Unit
BASE
Collector-Emitter Voltage VCEO Vdc
1
PN2222 30
EMITTER
PN2222A 40
Collector-Base Voltage VCBO Vdc
PN2222 60
PN2222A 75
Emitter-Base Voltage VEBO Vdc
PN2222 5. 0
TO-92
PN2222A 6.0
CASE 29
STYLE

1.4. pn2222ag.pdf Size:194K _upd

PN2222, PN2222A
General Purpose
Transistors
NPN Silicon
http://onsemi.com
Features
• Pb-Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
2
Rating Symbol Value Unit
BASE
Collector-Emitter Voltage VCEO Vdc
1
PN2222 30
EMITTER
PN2222A 40
Collector-Base Voltage VCBO Vdc
PN2222 60
PN2222A 75
Emitter-Base Voltage VEBO Vdc
PN2222 5.0
TO-92
PN2222A 6.0
CASE 29
STYLE

 1.5. pn2222a.pdf Size:73K _st

PN2222A

SMALL SIGNAL NPN TRANSISTOR
PRELIMINARY DATA
Ordering Code Marking Package / Shipment
PN2222A PN2222A TO-92 / Bulk
PN2222A-AP PN2222A TO-92 / Ammopack
SILICON EPITAXIAL PLANAR NPN
TRANSISTOR
TO-92 PACKAGE SUITABLE FOR
THROUGH-HOLE PCB ASSEMBLY
THE PNP COMPLEMENTARY TYPE IS
PN2907A
TO-92 TO-92
APPLICATIONS
Bulk Ammopack
WELL SUITABLE FOR TV AND HOME
APPLIANCE EQUIPME

1. 6. pn2222a mmbt2222a pzt2222a.pdf Size:174K _fairchild_semi

1.7. pn2222a .pdf Size:899K _fairchild_semi

1.8. pn2221 pn2222a.pdf Size:44K _central

145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 Fax: (631) 435-1824

1.9. pn2222a to-92.pdf Size:236K _mcc

MCC
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
PN2222A
Micro Commercial Components
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
Lead Free Finish/RoHS Compliant («P» Suffix designates
RoHS Compliant. See ordering information)
625mW
Marking:Type number
Continuous Collector Current (Ic) =600mA.
NPN General
Operating and storange temperatu

1.10. pn2222a.pdf Size:279K _utc

UNISONIC TECHNOLOGIES CO., LTD
PN2222A NPN SILICON TRANSISTOR
NPN GENERAL PURPOSE
AMPLIFIER
? FEATURES
* This device is for use as a medium power amplifier and switch
requiring collector currents up to 500mA.
? ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
PN2222AL-AB3-R PN2222AG-AB3-R SOT-89 B C E Tape Reel
PN2222AL-T92-R P

1.11. pn2222a.pdf Size:173K _auk

 PN2222A
NPN Silicon Transistor
Descriptions
PIN Connection
• General purpose application
C
• Switching application
Features
B
• Low Leakage current
• Low collector saturation voltage enabling
E
low voltage operation
• Complementary pair with PN2907A
TO-92
Ordering Information
Type NO. Marking Package Code
PN2222A PN2222A TO-92
Absolute maximum rat

1.12. hpn2222a.pdf Size:56K _hsmc

Spec. No. : HE6118
HI-SINCERITY
Issued Date : 1992.10.23
Revised Date : 2004.12.15
MICROELECTRONICS CORP.
Page No. : 1/5
HPN2222A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HPN2222A is designed for general purpose amplifier and high speed,
medium-power switching applications.
Features
TO-92
• Low Collector Saturation Voltage
• High Speed Switching
• For Complementary Use

P2N2222AG Datasheet (PDF)

1.1. p2n2222ag.pdf Size:165K _upd

P2N2222A
Amplifier Transistors
NPN Silicon
Features
• These are Pb—Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS (TA =25°C unless otherwise noted)
Characteristic Symbol Value Unit
2
BASE
Collector—Emitter Voltage VCEO 40 Vdc
Collector—Base Voltage VCBO 75 Vdc
3
Emitter—Base Voltage VEBO 6.0 Vdc
EMITTER
Collector Current — Continuous IC 600 mAdc
Total Devi

2.1. mtp2n2222a.pdf Size:238K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by P2N2222A/D
Amplifier Transistors
NPN Silicon
P2N2222A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
1
2
CollectorEmitter Voltage VCEO 40 Vdc 3
CollectorBase Voltage VCBO 75 Vdc
CASE 2904, STYLE 17
EmitterBase Voltage VEBO 6. 0 Vdc
TO92 (TO226AA)
Collector Current Continuous IC 600 mAdc

2.2. p2n2222a.pdf Size:238K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by P2N2222A/D
Amplifier Transistors
NPN Silicon
P2N2222A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
1
2
CollectorEmitter Voltage VCEO 40 Vdc 3
CollectorBase Voltage VCBO 75 Vdc
CASE 2904, STYLE 17
EmitterBase Voltage VEBO 6.0 Vdc
TO92 (TO226AA)
Collector Current Continuous IC 600 mAdc

 2.3. p2n2222a-d.pdf Size:164K _onsemi

P2N2222A
Amplifier Transistors
NPN Silicon
Features
These are Pb—Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS (TA =25C unless otherwise noted)
Characteristic Symbol Value Unit
2
BASE
Collector—Emitter Voltage VCEO 40 Vdc
Collector—Base Voltage VCBO 75 Vdc
3
Emitter—Base Voltage VEBO 6.0 Vdc
EMITTER
Collector Current — Continuous IC 600 mAdc
Total Device Dis

P2N2222 Datasheet (PDF)

1. 1. p2n2222ag.pdf Size:165K _upd

P2N2222A
Amplifier Transistors
NPN Silicon
Features
• These are Pb—Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS (TA =25°C unless otherwise noted)
Characteristic Symbol Value Unit
2
BASE
Collector—Emitter Voltage VCEO 40 Vdc
Collector—Base Voltage VCBO 75 Vdc
3
Emitter—Base Voltage VEBO 6.0 Vdc
EMITTER
Collector Current — Continuous IC 600 mAdc
Total Devi

1.2. mtp2n2222a.pdf Size:238K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by P2N2222A/D
Amplifier Transistors
NPN Silicon
P2N2222A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
1
2
CollectorEmitter Voltage VCEO 40 Vdc 3
CollectorBase Voltage VCBO 75 Vdc
CASE 2904, STYLE 17
EmitterBase Voltage VEBO 6.0 Vdc
TO92 (TO226AA)
Collector Current Continuous IC 600 mAdc

 1. 3. p2n2222a.pdf Size:238K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by P2N2222A/D
Amplifier Transistors
NPN Silicon
P2N2222A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
1
2
CollectorEmitter Voltage VCEO 40 Vdc 3
CollectorBase Voltage VCBO 75 Vdc
CASE 2904, STYLE 17
EmitterBase Voltage VEBO 6.0 Vdc
TO92 (TO226AA)
Collector Current Continuous IC 600 mAdc

1.4. p2n2222a-d.pdf Size:164K _onsemi

P2N2222A
Amplifier Transistors
NPN Silicon
Features
These are Pb—Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS (TA =25C unless otherwise noted)
Characteristic Symbol Value Unit
2
BASE
Collector—Emitter Voltage VCEO 40 Vdc
Collector—Base Voltage VCBO 75 Vdc
3
Emitter—Base Voltage VEBO 6.0 Vdc
EMITTER
Collector Current — Continuous IC 600 mAdc
Total Device Dis

 1. 5. p2n2222 a.pdf Size:240K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR SWITCHING TRANSISTORS P2N2222
P2N2222A
EBC
TO-92
Complementary Silicon Transistors For Switching And Linear Applications
DC Amplifier & Driver For Industrial Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION SYMBOL 2222 2222A UNIT
Collecto

P2N2222A Datasheet (PDF)

1.1. p2n2222ag.pdf Size:165K _upd

P2N2222A
Amplifier Transistors
NPN Silicon
Features
• These are Pb—Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS (TA =25°C unless otherwise noted)
Characteristic Symbol Value Unit
2
BASE
Collector—Emitter Voltage VCEO 40 Vdc
Collector—Base Voltage VCBO 75 Vdc
3
Emitter—Base Voltage VEBO 6.0 Vdc
EMITTER
Collector Current — Continuous IC 600 mAdc
Total Devi

1. 2. mtp2n2222a.pdf Size:238K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by P2N2222A/D
Amplifier Transistors
NPN Silicon
P2N2222A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
1
2
CollectorEmitter Voltage VCEO 40 Vdc 3
CollectorBase Voltage VCBO 75 Vdc
CASE 2904, STYLE 17
EmitterBase Voltage VEBO 6.0 Vdc
TO92 (TO226AA)
Collector Current Continuous IC 600 mAdc

 1.3. p2n2222a.pdf Size:238K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by P2N2222A/D
Amplifier Transistors
NPN Silicon
P2N2222A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
1
2
CollectorEmitter Voltage VCEO 40 Vdc 3
CollectorBase Voltage VCBO 75 Vdc
CASE 2904, STYLE 17
EmitterBase Voltage VEBO 6.0 Vdc
TO92 (TO226AA)
Collector Current Continuous IC 600 mAdc

1. 4. p2n2222a-d.pdf Size:164K _onsemi

P2N2222A
Amplifier Transistors
NPN Silicon
Features
These are Pb—Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS (TA =25C unless otherwise noted)
Characteristic Symbol Value Unit
2
BASE
Collector—Emitter Voltage VCEO 40 Vdc
Collector—Base Voltage VCBO 75 Vdc
3
Emitter—Base Voltage VEBO 6.0 Vdc
EMITTER
Collector Current — Continuous IC 600 mAdc
Total Device Dis

VN2222LL Datasheet (PDF)

1.1. vn2222llg.pdf Size:92K _update_mosfet

VN2222LLG
Small Signal MOSFET
150 mAmps, 60 Volts
N-Channel TO-92
http://onsemi.com
http://onsemi.com
Features
• This is a Pb-Free Device*
150 mA, 60 V
RDS(on) = 7.5 W
MAXIMUM RATINGS
N-Channel
Rating Symbol Value Unit
D
Drain -Source Voltage VDSS 60 Vdc
Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc
Gate-Source Voltage
G
— Continuous VGS ± 20 Vdc
— Non-repetitive (tp ≤ 5

1. 2. vn2222ll.rev1.pdf Size:68K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by VN2222LL/D
TMOS FET Transistor
NChannel Enhancement
VN2222LL
3 DRAIN
Motorola Preferred Device
2
GATE
1 SOURCE
MAXIMUM RATINGS
Rating Symbol Value Unit
1
DrainSource Voltage VDSS 60 Vdc
2
3
DrainGate Voltage (RGS = 1.0 M?) VDGR 60 Vdc
CASE 2904, STYLE 22
GateSource Voltage
TO92 (TO226AA)
Continuous VGS 2

 1.3. vn10lls vn0605t vn0610ll vn2222ll.pdf Size:51K _vishay

1.4. vn2222ll.pdf Size:17K _diodes

N-CHANNEL ENHANCEMENT
VN2222LL
MODE VERTICAL DMOS FET
ISSUE 2 FEB 94
S
G
D
TO92
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 60 V
Continuous Drain Current at Tamb = 25C ID 150 mA
Pulsed Drain Current IDM 1A
Gate Source Voltage VGS 40 V
Power Dissipation at Tamb = 25C Ptot 400 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 C

 1. 5. vn2222llg.pdf Size:96K _onsemi

VN2222LLG
Small Signal MOSFET
150 mAmps, 60 Volts
N-Channel TO-92
http://onsemi.com
http://onsemi.com
Features
This is a Pb-Free Device*
150 mA, 60 V
RDS(on) = 7.5 W
MAXIMUM RATINGS
N-Channel
Rating Symbol Value Unit
D
Drain -Source Voltage VDSS 60 Vdc
Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc
Gate-Source Voltage
G
— Continuous VGS 20 Vdc
— Non-repetitive (tp ? 50 ms) VG

2N2222ACSM Datasheet (PDF)

2.1. 2n2222ac3b.pdf Size:86K _upd

SILICON SWITCHING
NPN TRANSISTOR
2N2222AC3A, 2N2222AC3B
2N2222AC3C
• High Speed Saturated Switching
• Hermetic LCC3 Ceramic package.
• Variant B to MIL-PRF-19500/255 outline
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage 75V
VCEO
Collector – Emitter Voltage 50V
VEBO
Emitter – Bas

2.2. 2n2222ac1b.pdf Size:563K _upd

SILICON PLANAR
EPITAXIAL NPN TRANSISTOR
2N2222AC1
• High Speed Saturated Switching
• Hermetic Surface Mounted Package.
• Ideally suited for High Speed Switching
and General Purpose Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage 75V
VCEO
Collector – Emitter Voltage 50V
VE

 2.3. 2n2222ac3c.pdf Size:86K _upd

SILICON SWITCHING
NPN TRANSISTOR
2N2222AC3A, 2N2222AC3B
2N2222AC3C
• High Speed Saturated Switching
• Hermetic LCC3 Ceramic package.
• Variant B to MIL-PRF-19500/255 outline
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage 75V
VCEO
Collector – Emitter Voltage 50V
VEBO
Emitter – Bas

2.4. 2n2222ac1a.pdf Size:563K _upd

SILICON PLANAR
EPITAXIAL NPN TRANSISTOR
2N2222AC1
• High Speed Saturated Switching
• Hermetic Surface Mounted Package.
• Ideally suited for High Speed Switching
and General Purpose Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage 75V
VCEO
Collector – Emitter Voltage 50V
VE

 2.5. 2n2222ac3a.pdf Size:86K _upd

SILICON SWITCHING
NPN TRANSISTOR
2N2222AC3A, 2N2222AC3B
2N2222AC3C
• High Speed Saturated Switching
• Hermetic LCC3 Ceramic package.
• Variant B to MIL-PRF-19500/255 outline
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage 75V
VCEO
Collector – Emitter Voltage 50V
VEBO
Emitter – Bas

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Hoja de datos ( техническое описание в формате PDF ) электронных компонентов

Номер пьезы Описание Фабрикантес ПДФ
3308 ДВОЙНОЙ СИЛЬНОТОЧНЫЙ ОПЕРАЦИОННЫЙ УСИЛИТЕЛЬ
Юнисоник Текнолоджиз		 ПДФ
ВА5417 МОЩНЫЙ ДВОЙНОЙ УСИЛИТЕЛЬ МОЩНОСТИ
Юнисоник Текнолоджиз		 ПДФ
ЧА3511 Монолитная микроволновая микросхема GaAs
Объединенные монолитные полупроводники		 ПДФ
ЧА3512 GaAs монолитная микроволновая микросхема
Объединенные монолитные полупроводники		 ПДФ
ЧА3513 Монолитная микроволновая микросхема GaAs
Объединенные монолитные полупроводники		 ПДФ
ЧА3514 GaAs монолитная микроволновая микросхема
Объединенные монолитные полупроводники		 ПДФ
ЧА3666 Монолитная микроволновая микросхема GaAs
Объединенные монолитные полупроводники		 ПДФ
КХА3689-99Ф GaAs монолитная микроволновая микросхема
Объединенные монолитные полупроводники		 ПДФ
ЧА5356-КГГ Монолитная микроволновая микросхема GaAs
Объединенные монолитные полупроводники		 ПДФ
ЧА6005-99Ф GaAs монолитная микроволновая микросхема
Объединенные монолитные полупроводники		 ПДФ
ЧА6005-КЭГ Монолитная микроволновая микросхема GaAs
Объединенные монолитные полупроводники		 ПДФ
CHA6356-QXG GaAs монолитная микроволновая микросхема
Объединенные монолитные полупроводники		 ПДФ
ЧА6552-КДЖГ Монолитная микроволновая микросхема GaAs
Объединенные монолитные полупроводники		 ПДФ
ЧА7115-99Ф GaAs монолитная микроволновая микросхема
Объединенные монолитные полупроводники		 ПДФ

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